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1995 | 87 | 2 | 285-293
Article title

Some New Aspects of Porous Silicon

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Languages of publication
EN
Abstracts
EN
We recall the geometry of porous silicon and the order of magnitude of some characteristic parameters. We give a brief review of optical experiments and their different interpretations. We focus on quantitative interpretations and show that an essential concept is confinement in a quantum wire or box. In particular, the exchange energy of electron-hole pairs correlated by Coulomb interaction inside a quantum box explains results obtained between 4 I{ and room temperature. Nevertheless, the large shift of the main lumi­nescence line for similar porous silicon but different electrolytes cannot be explained by quantum confinement alone and has to be accounted for by the difference between the dielectric constants inside and outside the porous silicon. A brief account of electroluminescence experiments is also given.
Keywords
EN
Publisher

Year
Volume
87
Issue
2
Pages
285-293
Physical description
Dates
published
1995-02
Contributors
author
  • Laboratoire de Spectrométrie Physique, Université Joseph Fourier-Grenoble I, and C.N.R.S., B.P.87, 38402 Saint Martin d'Hères Cedex, France
author
  • Laboratoire de Spectrométrie Physique, Université Joseph Fourier-Grenoble I, and C.N.R.S., B.P.87, 38402 Saint Martin d'Hères Cedex, France
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z201kz
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