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1995 | 87 | 1 | 261-264
Article title

Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs

Content
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Languages of publication
EN
Abstracts
EN
Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were mea­sured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all ob­served structures. It was found that the electric field changed the lumines­cence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of exci­tonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an in­fluence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
Keywords
EN
Publisher

Year
Volume
87
Issue
1
Pages
261-264
Physical description
Dates
published
1995-01
Contributors
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z144kz
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