PL EN


Preferences help
enabled [disable] Abstract
Number of results
1995 | 87 | 1 | 249-252
Article title

Damage Production in As Implanted GaAs_{1-x}P_{x}

Content
Title variants
Languages of publication
EN
Abstracts
EN
Post-implantation damage in GaAs_{1-x}P_{x} compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10^{13} -8 × 10^{13} cm^{-2} at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscatter­ing 1.7 MeV He^{+} channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.
Keywords
EN
Publisher

Year
Volume
87
Issue
1
Pages
249-252
Physical description
Dates
published
1995-01
Contributors
author
  • Institute of Nuclear Chemistry and Technology, Dorodna 16, 03-195 Warszawa, Poland
author
  • Institute of Nuclear Chemistry and Technology, Dorodna 16, 03-195 Warszawa, Poland
author
  • Institute of Nuclear Chemistry and Technology, Dorodna 16, 03-195 Warszawa, Poland
  • FZR Forschungszentrum Rossendorf, Rossendorf/Dresden, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z141kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.