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1995 | 87 | 1 | 245-248
Article title

Photoluminescence of Donor-Doped ZnSe Films Grown by Molecular Beam Epitaxy

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EN
Abstracts
EN
We studied the effect of the donor doping of ZnSe films on their photoluminescence properties. The samples were doped during the molecular beam epitaxy growth, either with gallium or with chlorine. As the dopant concen­tration dose increases, the intensity of the band-edge emission first saturates, and then quenches in favor of the deep-level photoluminescence band. The main effect of donor doping on photoluminescence is a strong increase in intensity of the donor-bound exciton line, referred to as I_{2}. For Ga-doped films deep-band emission is much stronger, and the I_{2}-line is slightly weaker than for Cl-doped films with comparable doping level. The results confirm the superiority of chlorine over gallium as an n-type dopant in ZnSe. We dis­cuss the photoluminescence results and relate them to deep level transient spectroscopy data obtained on the same samples.
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Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
author
  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
author
  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
author
  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
References
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bwmeta1.element.bwnjournal-article-appv87z140kz
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