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1995 | 87 | 1 | 241-244
Article title

Indium Doping of CdTe Grown by Molecular Beam Epitaxy

Content
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Languages of publication
EN
Abstracts
EN
We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10^{14} up to 1.3 × 10^{18} cm^{-3}. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10^{18} cm^{-3}). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
Keywords
EN
Year
Volume
87
Issue
1
Pages
241-244
Physical description
Dates
published
1995-01
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z139kz
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