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1995 | 87 | 1 | 201-204
Article title

On Subband Mobilities Observed in δ-doped AlGaAs/GaAs Quantum Wells and GaAs Layers

Content
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Languages of publication
EN
Abstracts
EN
Electronic transport phenomena in molecular beam epitaxy grown sil­icon δ-doped AlGaAs/GaAs quantum wells and GaAs layers were investi­gated. Observations of the Shubnikov-de Haas oscillations allowed to deduce the redistribution of electrons among energy subbands formed by V-shaped and rectangular wells for GaAs layers and the AlGaAs/GaAs quantum wells, respectively. In both cases the effects of illumination upon individual sub-band mobilities and carrier concentrations were studied and the manifesta­tion of the DX centres was demonstrated.
Keywords
EN
Publisher

Year
Volume
87
Issue
1
Pages
201-204
Physical description
Dates
published
1995-01
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • SNCI CNRS, BP166, 38042 Grenoble Cedex 9, France
author
  • Department of Electrical Engineering and Electronics, UMIST, P.O. Box 88, Manchester M60 1QD, Great Britain
author
  • SNCI CNRS, BP166, 38042 Grenoble Cedex 9, France
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z129kz
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