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1995 | 87 | 1 | 141-143
Article title

High Pressure Freeze-out of Electrons in Undoped GaN Crystal. Proof of Existence of Resonant Donor State (Nitrogen Vacancy)

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Languages of publication
EN
Abstracts
EN
We investigated free carriers related optical absorption in GaN in hy­drostatic pressures up to 30 GPa. The disappearance of this absorption at pressures close to 18 GPa was explained by trapping electrons resulting from the shift of nitrogen vacancy related donor level into the GaN energy gap at high pressure. We estimated the energetic position of this level at atmo­spheric pressure to be about 0.8 eV above the conduction band minimum.
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EN
Publisher

Year
Volume
87
Issue
1
Pages
141-143
Physical description
Dates
published
1995-01
Contributors
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z115kz
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