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1995 | 87 | 1 | 137-140
Article title

Orientation of Metastable EL2 under Uniaxial Stress

Content
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Languages of publication
EN
Abstracts
EN
Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]^{-/0}) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]^{-/0} are found to be equal to -17 meV/GPa and -41 meV/GPa.
Keywords
EN
Publisher

Year
Volume
87
Issue
1
Pages
137-140
Physical description
Dates
published
1995-01
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z114kz
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