Experimental Evidence for the Spatial Correlation of Charged EL2(+) Defects and Acceptors in Semi-insulating GaAs

• Authors: M.L. Sadowski , M. Grynberg
• Languages of publication: EN

Abstracts

EN

The far-infrared photoconductivity due to shallow donors was measured in semi-insulating GaAs for different states of the EL2 defect - normal, metastable, and during the transition - with and without hydrostatic pres­sure. The results show that the intra-donor transition line broadening ob­served previously after transferring the EL2 to the metastable configuration cannot be due to lattice distortion effects, and can only be explained in terms of a spatial correlation of charged EL2(+) and acceptor A(-) states, which form electric dipoles.

Keywords

EN

62.50.+p; 78.50.Ge; 71.55.Eq

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 1
• Pages: 133-136

Dates

published

1995-01

Contributors

author

M.L. Sadowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Grynberg

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland