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1995 | 87 | 1 | 133-136
Article title

Experimental Evidence for the Spatial Correlation of Charged EL2(+) Defects and Acceptors in Semi-insulating GaAs

Content
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Languages of publication
EN
Abstracts
EN
The far-infrared photoconductivity due to shallow donors was measured in semi-insulating GaAs for different states of the EL2 defect - normal, metastable, and during the transition - with and without hydrostatic pres­sure. The results show that the intra-donor transition line broadening ob­served previously after transferring the EL2 to the metastable configuration cannot be due to lattice distortion effects, and can only be explained in terms of a spatial correlation of charged EL2(+) and acceptor A(-) states, which form electric dipoles.
Keywords
EN
Publisher

Year
Volume
87
Issue
1
Pages
133-136
Physical description
Dates
published
1995-01
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z113kz
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