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Abstracts
Conduction and valence band edges in diluted magnetic semiconductors undergo enormous Zeeman shifts when a magnetic field is applied, reaching values in excess of 100 meV at low temperatures. These Zeeman shifts can thus have profound consequences on the properties of DMS/non-DMS heterostructures, since they provide the opportunity of tuning their band alignment by varying an applied field. This leads to a variety of entirely new effects, and also provides a powerful tool for probing the effect of band alignment on the properties of semiconductor heterostructures in general. We illustrate this with several examples. First, using the ZnSe/ZnMnSe system, we discuss the creation of a spatial spin modulation (spin superlattice). Second, we use the drastic differences in the Zeeman splitting occurring in different layers of a DMS/non-DMS superlattice in order to pinpoint the localization in space of the specific electronic states involved in optical transitions. We illustrate this by investigating the localization of above-barrier states in type-I ZnSe/ZnMnSe superlattices, and of spatially-direct (type-I) excitons which occur in ZnTe/CdMnSe and ZnMnTe/CdSe type-II super-lattices. Finally, we exploit Zeeman tuning to demonstrate the confinement effects which occur in a single quantum barrier.
Journal
Year
Volume
Issue
Pages
95-106
Physical description
Dates
published
1995-01
Contributors
author
- Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA
author
- Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA
author
- Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z110kz