Charge Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems

• Authors: W. Walukiewicz
• Languages of publication: EN

Abstracts

EN

General aspects of the electronic transport in two-dimensional and quasi-three-dimensional semiconductor systems are discussed. Contributions of different scattering processes to the total electron and hole mobilities in various types of modulation doped heterostructures are calculated. It is shown that in a wide temperature range phonon scattering is the principal scattering mechanism limiting electron and hole mobilities in high quality AlGaAs/GaAs modulation doped heterostructures. Scattering from rough walls in wide parabolic wells is briefly reviewed.

Keywords

EN

73.50.Bk; 73.40.Kp

Discipline

• 73.50.Bk: General theory, scattering mechanisms
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 1
• Pages: 35-46

Dates

published

1995-01

Contributors

author

W. Walukiewicz

• Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, 1 Cyclotron Road, Berkeley, California 94720, USA

Identifiers

DOI

10.12693/APhysPolA.87.35