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1995 | 87 | 1 | 35-46
Article title

Charge Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems

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Content
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Languages of publication
EN
Abstracts
EN
General aspects of the electronic transport in two-dimensional and quasi-three-dimensional semiconductor systems are discussed. Contributions of different scattering processes to the total electron and hole mobilities in various types of modulation doped heterostructures are calculated. It is shown that in a wide temperature range phonon scattering is the principal scattering mechanism limiting electron and hole mobilities in high quality AlGaAs/GaAs modulation doped heterostructures. Scattering from rough walls in wide parabolic wells is briefly reviewed.
Keywords
EN
Year
Volume
87
Issue
1
Pages
35-46
Physical description
Dates
published
1995-01
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z104kz
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