Title variants
Languages of publication
Abstracts
General aspects of the electronic transport in two-dimensional and quasi-three-dimensional semiconductor systems are discussed. Contributions of different scattering processes to the total electron and hole mobilities in various types of modulation doped heterostructures are calculated. It is shown that in a wide temperature range phonon scattering is the principal scattering mechanism limiting electron and hole mobilities in high quality AlGaAs/GaAs modulation doped heterostructures. Scattering from rough walls in wide parabolic wells is briefly reviewed.
Discipline
Journal
Year
Volume
Issue
Pages
35-46
Physical description
Dates
published
1995-01
Contributors
author
- Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, 1 Cyclotron Road, Berkeley, California 94720, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z104kz