Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors

• Authors: M. Altarelli
• Languages of publication: EN

Abstracts

EN

A brief review of the main experimental techniques exploiting syn­chrotron radiation in semiconductor physics is attempted. Topics empha­sized include the study of surface and interface phenomena, such as sur­face structural properties (e.g. surface reconstruction) by X-ray diffraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many ex­perimental techniques applicable to research in semiconductor physics. Ex­amples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.

Keywords

EN

68.35.Bs; 68.55.-a; 78.70.Ck

Discipline

• 78.70.Ck: X-ray scattering
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 1
• Pages: 17-24

Dates

published

1995-01

Contributors

author

M. Altarelli

• European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France

Identifiers

DOI

10.12693/APhysPolA.87.17