Photoemission and Inverse Photoemission Studies of SiO_{2}

• Authors: A. Sobczak , R. Nietubyć , J.W. Sobczak
• Languages of publication: EN

Abstracts

EN

Occupied and unoccupied electron states of amorphous silicon dioxide film supported on Si crystal are studied by using X-ray photoemission and, for the first time, X-ray inverse photoemission (X-ray bremsstrahlung isochromat method). A special care was undertaken to minimize decomposition of silicon oxide during X-ray bremsstrahlung measurements. The experimental spectra are compared with theoretical band structure calculations for amorphous SiO_{2} from the literature and good overall agreement is found.

Keywords

EN

79.20.Kz; 71.25.Tn; 79.60.Ht

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1994
• Volume: 86
• Issue: 5
• Pages: 837-843

Dates

published

1994-11

Contributors

author

A. Sobczak

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

R. Nietubyć

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J.W. Sobczak

• Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warszawa, Poland