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1994 | 86 | 5 | 837-843
Article title

Photoemission and Inverse Photoemission Studies of SiO_{2}

Content
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Languages of publication
EN
Abstracts
EN
Occupied and unoccupied electron states of amorphous silicon dioxide film supported on Si crystal are studied by using X-ray photoemission and, for the first time, X-ray inverse photoemission (X-ray bremsstrahlung isochromat method). A special care was undertaken to minimize decomposition of silicon oxide during X-ray bremsstrahlung measurements. The experimental spectra are compared with theoretical band structure calculations for amorphous SiO_{2} from the literature and good overall agreement is found.
Keywords
EN
Publisher

Year
Volume
86
Issue
5
Pages
837-843
Physical description
Dates
published
1994-11
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv86z522kz
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