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1994 | 86 | 5 | 825-830
Article title

X-Ray Photoelectron Spectroscopy and Optical Reflectivity Studies of Si Surfaces Prepared by Chemical Etching

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Languages of publication
EN
Abstracts
EN
Complementary X-ray photoelectron spectroscopy and optical reflectivity studies of crystalline Si(111) surfaces prepared by two different wet chemical etching processes were performed. These included aqueous HF solution etch or diluted CP-4 bath. Optical reflectivity spectra of Si surfaces, measured in the range 3.7-11 eV, were found strongly dependent on the applied etching process. Analysis of the core level X-ray photoelectron spectroscopy data has shown similarity of the surface structure, irrespectively of the etching procedure. Finally, comparison of optical reflectivity and valence band X-ray photoelectron spectra revealed a qualitative correlation between them indicating dominant influence of the bulk (here, the subsurface region containing polishing-induced defects) in the case studied. This paper is the first one which presents correlations between optical reflectivity and X-ray photoelectron spectroscopy data for Si and thus illustrates a bulk sensitivity of both techniques considered.
Keywords
EN
Publisher

Year
Volume
86
Issue
5
Pages
825-830
Physical description
Dates
published
1994-11
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv86z520kz
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