Oxygen and Silicon K-EXAFS in SiO_{2}

• Authors: R. Nietubyć
• Languages of publication: EN

Abstracts

EN

The aim of this work was to calculate EXAFS (extended X-ray absorption fine structure) profile of the constituent elements for SiO_{2} in β-quartz and in its amorphous form within a single scattering curved waves approximation. This method extends the EXAFS analysis to lower energies than the plane wave approximation. We have used wave functions for free ions and Pendry's procedure for central atom phase shifts calculation. Our results for Si K-EXAFS were consistent with experiment, whereas a significant deviation from experimental results for O K-EXAFS was observed. Similar EXAFS profiles for β-quartz and amorphous SiO_{2} were obtained from calculations.

Keywords

EN

61.10.Wg; 78.70.Dm

• Journal: Acta Physica Polonica A
• Year: 1994
• Volume: 86
• Issue: 5
• Pages: 741-748

Dates

published

1994-11

Contributors

author

R. Nietubyć

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland