PL EN


Preferences help
enabled [disable] Abstract
Number of results
1994 | 86 | 5 | 741-748
Article title

Oxygen and Silicon K-EXAFS in SiO_{2}

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
The aim of this work was to calculate EXAFS (extended X-ray absorption fine structure) profile of the constituent elements for SiO_{2} in β-quartz and in its amorphous form within a single scattering curved waves approximation. This method extends the EXAFS analysis to lower energies than the plane wave approximation. We have used wave functions for free ions and Pendry's procedure for central atom phase shifts calculation. Our results for Si K-EXAFS were consistent with experiment, whereas a significant deviation from experimental results for O K-EXAFS was observed. Similar EXAFS profiles for β-quartz and amorphous SiO_{2} were obtained from calculations.
Keywords
EN
Publisher

Year
Volume
86
Issue
5
Pages
741-748
Physical description
Dates
published
1994-11
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv86z510kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.