Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
1994 | 86 | 5 | 741-748

Article title

Oxygen and Silicon K-EXAFS in SiO_{2}

Authors

Content

Title variants

Languages of publication

EN

Abstracts

EN
The aim of this work was to calculate EXAFS (extended X-ray absorption fine structure) profile of the constituent elements for SiO_{2} in β-quartz and in its amorphous form within a single scattering curved waves approximation. This method extends the EXAFS analysis to lower energies than the plane wave approximation. We have used wave functions for free ions and Pendry's procedure for central atom phase shifts calculation. Our results for Si K-EXAFS were consistent with experiment, whereas a significant deviation from experimental results for O K-EXAFS was observed. Similar EXAFS profiles for β-quartz and amorphous SiO_{2} were obtained from calculations.

Keywords

EN

Year

Volume

86

Issue

5

Pages

741-748

Physical description

Dates

published
1994-11

Contributors

author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv86z510kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.