Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation

• Authors: V.I. Khrupa , D.O. Grigoryev , M Ya Skorokhod , L.I. Datsenko , J. Bąk-Misiuk
• Languages of publication: EN

Abstracts

EN

Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when the characteristic AgK_{α_{1}} line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enhancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence by single crystal spectrometer permitted to determine the mean level of crystal lattice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value was estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.

Keywords

EN

81.40.-z; 61.70.-r

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1994
• Volume: 86
• Issue: 4
• Pages: 591-597

Dates

published

1994-10

Contributors

author

V.I. Khrupa

• Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 45, 252028 Kiev-28, Ukraine

author

D.O. Grigoryev

• Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 45, 252028 Kiev-28, Ukraine

author

M Ya Skorokhod

• Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 45, 252028 Kiev-28, Ukraine

author

L.I. Datsenko

• Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 45, 252028 Kiev-28, Ukraine

author

J. Bąk-Misiuk

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland