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1994 | 86 | 4 | 591-597
Article title

Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation

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EN
Abstracts
EN
Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when the characteristic AgK_{α_{1}} line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enhancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence by single crystal spectrometer permitted to determine the mean level of crystal lattice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value was estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.
Keywords
EN
Publisher

Year
Volume
86
Issue
4
Pages
591-597
Physical description
Dates
published
1994-10
Contributors
author
  • Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 45, 252028 Kiev-28, Ukraine
  • Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 45, 252028 Kiev-28, Ukraine
  • Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 45, 252028 Kiev-28, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 45, 252028 Kiev-28, Ukraine
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv86z415kz
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