Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment

• Authors: L.I. Datsenko , A. Misiuk , J. Härtwig , A. Briginets , V.I. Khrupa
• Languages of publication: EN

Abstracts

EN

The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.

Keywords

EN

81.40.-z; 61.70.-r

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1994
• Volume: 86
• Issue: 4
• Pages: 585-590

Dates

published

1994-10

Contributors

author

L.I. Datsenko

• Institute of Semiconductor Physics, National Academy of Sciences, Prosp. Nauki 45, 252028 Kiev-28, Ukraine

author

A. Misiuk

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Härtwig

• Experiments Division of ESRF, BP 220, 38043 Grenoble Cedex, France

author

A. Briginets

• Institute of Semiconductor Physics, National Academy of Sciences, Prosp. Nauki 45, 252028 Kiev-28, Ukraine

author

V.I. Khrupa

• Institute of Semiconductor Physics, National Academy of Sciences, Prosp. Nauki 45, 252028 Kiev-28, Ukraine