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1994 | 86 | 4 | 585-590
Article title

Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment

Content
Title variants
Languages of publication
EN
Abstracts
EN
The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.
Keywords
EN
Publisher

Year
Volume
86
Issue
4
Pages
585-590
Physical description
Dates
published
1994-10
Contributors
author
  • Institute of Semiconductor Physics, National Academy of Sciences, Prosp. Nauki 45, 252028 Kiev-28, Ukraine
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Experiments Division of ESRF, BP 220, 38043 Grenoble Cedex, France
author
  • Institute of Semiconductor Physics, National Academy of Sciences, Prosp. Nauki 45, 252028 Kiev-28, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences, Prosp. Nauki 45, 252028 Kiev-28, Ukraine
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv86z414kz
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