Transmission Electron Microscopy Studies of Kr^{+}-Implanted Silicon

• Authors: J. Morawiec
• Languages of publication: EN

Abstracts

EN

The structure and the depth distribution of radiation damage caused in ⟨111⟩ Si by high-dose krypton implantations (E_{i} = 150 keV, T_{i} = RT, D_{1} = 5 × 10^{15}, D_{2} = 1 × 10^{16} and D_{3} = 5 × 10^{16} cm^{-2}) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed.

Keywords

EN

61.16.Bg; 61.72.Ff; 61.72.Qq; 61.72.Tt; 68.35.Fx; 81.40.Gh

Discipline

• 61.72.Qq: Microscopic defects (voids, inclusions, etc.)
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 68.35.Fx: Diffusion; interface formation(see also 66.30.-h Diffusion in solids, for diffusion of adsorbates, see 68.43.Jk)
• 81.40.Gh: Other heat and thermomechanical treatments

• Journal: Acta Physica Polonica A
• Year: 1994
• Volume: 85
• Issue: 5
• Pages: 819-824

Dates

published

1994-05

received

1993-04-30

revised

1994-01-20

Contributors

author

J. Morawiec

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.85.819