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1994 | 85 | 5 | 819-824
Article title

Transmission Electron Microscopy Studies of Kr^{+}-Implanted Silicon

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Abstracts
EN
The structure and the depth distribution of radiation damage caused in ⟨111⟩ Si by high-dose krypton implantations (E_{i} = 150 keV, T_{i} = RT, D_{1} = 5 × 10^{15}, D_{2} = 1 × 10^{16} and D_{3} = 5 × 10^{16} cm^{-2}) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed.
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  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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bwmeta1.element.bwnjournal-article-appv85z505kz
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