Title variants
Languages of publication
Abstracts
The structure and the depth distribution of radiation damage caused in ⟨111⟩ Si by high-dose krypton implantations (E_{i} = 150 keV, T_{i} = RT, D_{1} = 5 × 10^{15}, D_{2} = 1 × 10^{16} and D_{3} = 5 × 10^{16} cm^{-2}) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed.
Discipline
- 61.72.Qq: Microscopic defects (voids, inclusions, etc.)
- 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
- 68.35.Fx: Diffusion; interface formation(see also 66.30.-h Diffusion in solids, for diffusion of adsorbates, see 68.43.Jk)
- 81.40.Gh: Other heat and thermomechanical treatments
Journal
Year
Volume
Issue
Pages
819-824
Physical description
Dates
published
1994-05
received
1993-04-30
revised
1994-01-20
Contributors
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv85z505kz