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1994 | 85 | 5 | 819-824
Article title

Transmission Electron Microscopy Studies of Kr^{+}-Implanted Silicon

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Content
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EN
Abstracts
EN
The structure and the depth distribution of radiation damage caused in ⟨111⟩ Si by high-dose krypton implantations (E_{i} = 150 keV, T_{i} = RT, D_{1} = 5 × 10^{15}, D_{2} = 1 × 10^{16} and D_{3} = 5 × 10^{16} cm^{-2}) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed.
Keywords
Year
Volume
85
Issue
5
Pages
819-824
Physical description
Dates
published
1994-05
received
1993-04-30
revised
1994-01-20
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv85z505kz
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