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Abstracts
The resistivity (ρ) and temperature coefficient of resistivity (TCR) dependencies on modulation wavelength (λ) were examined in Fe/Zr multi-layer thin films. It was shown that the ρ(λ) and TCR(λ) behaviours can be explained on the basis of the assumption that the amorphous phase can be spontaneously formed during the deposition process. We found that the effective thickness of the amorphous phase was ≈2 nm per single interface.
Keywords
Journal
Year
Volume
Issue
Pages
443-447
Physical description
Dates
published
1994-02
Contributors
author
- Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17/19, 60-179 Poznań, Poland
author
- Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17/19, 60-179 Poznań, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv85z242kz