Resistivity and Temperature Coefficient of Resistivity of the Fe/Zr Multilayer Films
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The resistivity (ρ) and temperature coefficient of resistivity (TCR) dependencies on modulation wavelength (λ) were examined in Fe/Zr multi-layer thin films. It was shown that the ρ(λ) and TCR(λ) behaviours can be explained on the basis of the assumption that the amorphous phase can be spontaneously formed during the deposition process. We found that the effective thickness of the amorphous phase was ≈2 nm per single interface.
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