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1993 | 84 | 5 | 881-888
Article title

Lattice Location of Rare Earth Ions in Semiconductors and Their Optical Activity

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EN
Abstracts
EN
Lattice location experiments performed on Yb- and Er-doped III-V semiconducting compounds using Rutherford backscattering and channeling have been reviewed. It has been shown that Yb atoms locate substitutionally in InP and InP-based ternary alloys, while in gallium compounds no substitutional fraction of Yb could be detected. An intense intra-4f-shell luminescence of Yb^{3+} has been observed in In compounds. The photoluminescence spectra of Yb^{3+} reflect local alloy disorder in InPAs and GaInP, suggesting that the Yb atoms are tetrahedrally coordinated. No Yb-related emission could be observed in gallium compounds, except a weak Yb^{3+} photoluminescence in GaP. An evidence has been presented that Er atoms introduced into III-V compounds locate predominantly at interstitial positions. In GaAs they move into tetrahedral lattice sites as a result of thermal annealing at temperatures higher than 600°C. The location of Er atoms at substitutional positions is accompanied with the disappearance of the intra-4f-shell luminescence of Er^{3+}. The reasons of the observed correlation of luminescence properties and positions of Er and Yb atoms in zincblende lattices are discussed.
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EN
Publisher

Year
Volume
84
Issue
5
Pages
881-888
Physical description
Dates
published
1993-11
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z506kz
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