Molecular Beam Epitaxy of Al_{x}Ga_{1-x}Sb and Al_{x}Ga_{1-x}As: New Donor Doping Sources

• Authors: L. Dobaczewski , M. Missous , K. Singer , Z. Żytkiewicz
• Languages of publication: EN

Abstracts

EN

The first results obtained with the use of Ga_{2}S_{3} and Ga_{2}Se_{3} compounds as sources of donor elements for molecular beam epitaxy of Al_{x}Ga_{1-x}Sb (0 ≤ x ≤ 1) and Al_{x}Ga_{1-x}As (0 ≤ x ≤ 0.4) are reported. In GaAs free electron concentrations obtained when incorporating the donors from these sources can be easily controlled in the range of three orders of magnitude. For Al_{x}Ga_{1-x}Sb it was possible to compensate the high concentration of native acceptors and to obtain n-type of conductivity.

Keywords

EN

68.55.Bd; 61.50.Cj; 71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 826-828

Dates

published

1993-10

Contributors

author

L. Dobaczewski

• Department of Electrical Engineering and Electronics, and Centre for Electronic Materials, UMIST, Manchester, M60 1QD, P.O. Box 88, United Kingdom
• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Missous

• Department of Electrical Engineering and Electronics, and Centre for Electronic Materials, UMIST, Manchester, M60 1QD, P.O. Box 88, United Kingdom

author

K. Singer

• Department of Electrical Engineering and Electronics, and Centre for Electronic Materials, UMIST, Manchester, M60 1QD, P.O. Box 88, United Kingdom

author

Z. Żytkiewicz

• Department of Electrical Engineering and Electronics, and Centre for Electronic Materials, UMIST, Manchester, M60 1QD, P.O. Box 88, United Kingdom
• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.826