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1993 | 84 | 4 | 826-828
Article title

Molecular Beam Epitaxy of Al_{x}Ga_{1-x}Sb and Al_{x}Ga_{1-x}As: New Donor Doping Sources

Content
Title variants
Languages of publication
EN
Abstracts
EN
The first results obtained with the use of Ga_{2}S_{3} and Ga_{2}Se_{3} compounds as sources of donor elements for molecular beam epitaxy of Al_{x}Ga_{1-x}Sb (0 ≤ x ≤ 1) and Al_{x}Ga_{1-x}As (0 ≤ x ≤ 0.4) are reported. In GaAs free electron concentrations obtained when incorporating the donors from these sources can be easily controlled in the range of three orders of magnitude. For Al_{x}Ga_{1-x}Sb it was possible to compensate the high concentration of native acceptors and to obtain n-type of conductivity.
Keywords
EN
Year
Volume
84
Issue
4
Pages
826-828
Physical description
Dates
published
1993-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z454kz
Identifiers
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