Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation

• Authors: T. Figielski , A. Mąkosa , T. Wosiński , P. Harness , K. Singer
• Languages of publication: EN

Abstracts

EN

We investigated current-voltage and photocurrent-voltage characteristics of a double-barrier resonant tunneling structure based on AlGaAs. To explain the observed "double-step" feature of the characteristics, we have proposed a mechanism including a multiple phonon emission of an electron dwelling in the quantum well.

Keywords

EN

73.40.Gk; 85.30.Mn

Discipline

• 85.30.Mn: Junction breakdown and tunneling devices (including resonance tunneling devices)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 817-819

Dates

published

1993-10

Contributors

author

T. Figielski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Mąkosa

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Wosiński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

P. Harness

• Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology (UMIST), PO Box 88, Manchester, M60 1QP, U.K.

author

K. Singer

• Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology (UMIST), PO Box 88, Manchester, M60 1QP, U.K.

Identifiers

DOI

10.12693/APhysPolA.84.817