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1993 | 84 | 4 | 817-819
Article title

Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation

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EN
Abstracts
EN
We investigated current-voltage and photocurrent-voltage characteristics of a double-barrier resonant tunneling structure based on AlGaAs. To explain the observed "double-step" feature of the characteristics, we have proposed a mechanism including a multiple phonon emission of an electron dwelling in the quantum well.
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Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology (UMIST), PO Box 88, Manchester, M60 1QP, U.K.
author
  • Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology (UMIST), PO Box 88, Manchester, M60 1QP, U.K.
References
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z451kz
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