On the Pinning of the Fermi Level by Germanium A_{1}^{0/+} Deep Donor State in GaAs Codoped with Ge and Te

• Authors: T. Słupiński , G. Nowak , J. Przybytek , R. Stępniewski
• Languages of publication: EN

Abstracts

EN

We present the possibility of GaAs:Ge,Te crystals growth from the melt (liquid encapsulated Czochralski method) with partially occupied, at ambient pressure, the A_{1} localized electronic state of Ge_{Ga} impurity. In as-grown crystals the amphotericity of Ge and creation of defects (deep acceptor complexes, precipitates etc.) during cooling after growth limit the free electron concentration below the value necessary to populate the A_{1}^{0/+} level. Special annealing of the samples, which enlarges the free electron concentration, was used. The occupation of A_{1}^{0/+} level, at ambient pressure, was observed by pressure dependent Hall effect measurements.

Keywords

EN

72.20.Jv

Discipline

• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 807-811

Dates

published

1993-10

Contributors

author

T. Słupiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

G. Nowak

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Przybytek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

R. Stępniewski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.807