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1993 | 84 | 4 | 807-811
Article title

On the Pinning of the Fermi Level by Germanium A_{1}^{0/+} Deep Donor State in GaAs Codoped with Ge and Te

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EN
Abstracts
EN
We present the possibility of GaAs:Ge,Te crystals growth from the melt (liquid encapsulated Czochralski method) with partially occupied, at ambient pressure, the A_{1} localized electronic state of Ge_{Ga} impurity. In as-grown crystals the amphotericity of Ge and creation of defects (deep acceptor complexes, precipitates etc.) during cooling after growth limit the free electron concentration below the value necessary to populate the A_{1}^{0/+} level. Special annealing of the samples, which enlarges the free electron concentration, was used. The occupation of A_{1}^{0/+} level, at ambient pressure, was observed by pressure dependent Hall effect measurements.
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EN
Publisher

Year
Volume
84
Issue
4
Pages
807-811
Physical description
Dates
published
1993-10
Contributors
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z449kz
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