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1993 | 84 | 4 | 804-806
Article title

Shallow Ohmic Contact System to n-GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
804-806
Physical description
Dates
published
1993-10
Contributors
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Nuclear Studies, Hoża 69, 00-682 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z448kz
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