PL EN


Preferences help
enabled [disable] Abstract
Number of results
1993 | 84 | 4 | 801-803
Article title

Mechanism of Thermal Interaction of In with GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
General behavior of In/GaAs couple heat-treated at 570°C for 2 hours was studied with secondary-ion-mass spectrometry, scanning electron microscopy, Rutherford backscattering spectroscopy and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, In interacts with the substrate dislocations to form In(Ga)As dendrites. The driving force for this process is presumably excess arsenic reported to be present in the vicinity of the individual dislocations.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
801-803
Physical description
Dates
published
1993-10
Contributors
author
  • Institute of Electronic Technology, Al. Lotników 46, 02-668 Warszawa, Poland
  • Institute of Electronic Technology, Al. Lotników 46, 02-668 Warszawa, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
  • Institute for Nuclear Problems, Hoża 69, 00-681 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z447kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.