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1993 | 84 | 4 | 801-803
Article title

Mechanism of Thermal Interaction of In with GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
General behavior of In/GaAs couple heat-treated at 570°C for 2 hours was studied with secondary-ion-mass spectrometry, scanning electron microscopy, Rutherford backscattering spectroscopy and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, In interacts with the substrate dislocations to form In(Ga)As dendrites. The driving force for this process is presumably excess arsenic reported to be present in the vicinity of the individual dislocations.
Keywords
EN
Year
Volume
84
Issue
4
Pages
801-803
Physical description
Dates
published
1993-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z447kz
Identifiers
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