PL EN


Preferences help
enabled [disable] Abstract
Number of results
1993 | 84 | 4 | 789-794
Article title

X-Ray Topographic Investigation of Cellular Structure and its Relation to another Defects in Various Types of GaAs Single-Crystals

Content
Title variants
Languages of publication
EN
Abstracts
EN
The defect patterns in GaAs crystal grown using liquid encapsulated Czochralski and gradient freeze methods with various types of doping were characterized using complementary X-ray topographic methods. It was found that the cellular structure occurring in the low doped crystal is developed independently from the actual growth surface. The occurrence of the cellular structure is connected with significant lattice deformation, and some results point that significant stress can influence its formation. The high doping prevents formation of the cellular structure, but at higher doping the phenomenon of "cellular growth" can occur due to instabilities of the growth surface. The present results point that defect pattern in GaAs crystals is more affected by the type of doping than by the choice of the growth method.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
789-794
Physical description
Dates
published
1993-10
Contributors
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z444kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.