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1993 | 84 | 4 | 761-764
Article title

Visible Luminescence from Porous Silicon

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Abstracts
EN
This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.
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Contributors
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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bwmeta1.element.bwnjournal-article-appv84z437kz
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