Visible Luminescence from Porous Silicon

• Authors: W. Bała , F. Firszt , E. Nossarzewska-Orłowska , A. Brzozowski , B. Orłowski , B. Kowalski , E. Guziewicz
• Languages of publication: EN

Abstracts

EN

This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.

Keywords

EN

78.66.-w

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 761-764

Dates

published

1993-10

Contributors

author

W. Bała

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

F. Firszt

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

E. Nossarzewska-Orłowska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

A. Brzozowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

B. Orłowski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

B. Kowalski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.761