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1993 | 84 | 4 | 757-760
Article title

Photo-ESR Study of the DX to Shallow Donor Conversion in Te Doped Al_{x}Ga_{1-x}As

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Languages of publication
EN
Abstracts
EN
Results of detailed electron spin resonance (ESR) study of Te doped Al_{x}Ga_{1-x}As epilayers with x = 0.41, 0.42, and 0.5 Al fractions are presented. It is shown that the ESR signal observed critically depends on cooling steps and that the shallow donor ESR signal can be observed prior to illumination. The first ESR study of AlGaAs layers with removed GaAs substrate are presented. The mechanism of the enhanced photosensitivity of the ESR signal is explained. It is found very paradoxical that the ESR signals decreases upon the illumination even though shallow donor concentration is increased.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
757-760
Physical description
Dates
published
1993-10
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Van der Waals-Zeeman Lab., Amsterdam University, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z436kz
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