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1993 | 84 | 4 | 749-752
Article title

Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

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EN
Abstracts
EN
The interband absorption of strained InGaAs/GaAs multiple quantum well was studied at room temperature for pressures up to 5.5 GPa. Three absorption lines were attributed to the excitonic transitions hh1-e1, lh1-e1 and hh2-e2. They were visible until pressure of about 5 GPa which is above the Γ-X crossover for this system. Pressure coefficients of the observed lines were compared with the literature data. The origin of broadening of the lines above Γ-X crossover is discussed.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
749-752
Physical description
Dates
published
1993-10
Contributors
author
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
author
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
author
  • U.S. Army Laboratory Command, 2800 Powder Mill Road, Adelphi, Md 20783, USA
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z434kz
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