Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

Sosin, T.; Perlin, P.; Trzeciakowski, W.; Tober, R.

doi:10.12693/APhysPolA.84.749

Journal

Acta Physica Polonica A

1993 | 84 | 4 | 749-752

Article title

Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

Authors

T. Sosin , P. Perlin , W. Trzeciakowski , R. Tober

Content

Full texts:

http://przyrbwn.icm.edu.pl/APP/PDF/84/a084z4p34.pdf [remote]

Title variants

Languages of publication

Abstracts

The interband absorption of strained InGaAs/GaAs multiple quantum well was studied at room temperature for pressures up to 5.5 GPa. Three absorption lines were attributed to the excitonic transitions hh1-e1, lh1-e1 and hh2-e2. They were visible until pressure of about 5 GPa which is above the Γ-X crossover for this system. Pressure coefficients of the observed lines were compared with the literature data. The origin of broadening of the lines above Γ-X crossover is discussed.

Keywords

73.20.Dx

Publisher

Journal

Acta Physica Polonica A

Year

1993

Volume

Issue

Pages

749-752

Physical description

Dates

published

1993-10

Contributors

author

T. Sosin

High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

author

P. Perlin

High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

author

W. Trzeciakowski

High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

author

R. Tober

U.S. Army Laboratory Command, 2800 Powder Mill Road, Adelphi, Md 20783, USA

References

Document Type

Publication order reference

Identifiers

DOI

10.12693/APhysPolA.84.749

YADDA identifier

bwmeta1.element.bwnjournal-article-appv84z434kz