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Abstracts
The interband absorption of strained InGaAs/GaAs multiple quantum well was studied at room temperature for pressures up to 5.5 GPa. Three absorption lines were attributed to the excitonic transitions hh1-e1, lh1-e1 and hh2-e2. They were visible until pressure of about 5 GPa which is above the Γ-X crossover for this system. Pressure coefficients of the observed lines were compared with the literature data. The origin of broadening of the lines above Γ-X crossover is discussed.
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Journal
Year
Volume
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Pages
749-752
Physical description
Dates
published
1993-10
Contributors
author
- High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
author
- High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
author
- High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
author
- U.S. Army Laboratory Command, 2800 Powder Mill Road, Adelphi, Md 20783, USA
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z434kz