Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions

• Authors: L. Dobaczewski , J. Langer , M. Missous
• Languages of publication: EN

Abstracts

EN

The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al on AlGaAs metal-semiconductor junctions is reported. The pressure change of the Schottky barrier on n-type AlGaAs is the same as that of the energy gap (for both direct and indirect-gap AlGaAs compositions), while for p-type AlGaAs it is negligible. This result is in direct conflict with a class of models of the Schottky barrier formation based on a concept of a semiconductor neutrality level alignment with the metal Fermi level.

Keywords

EN

73.30.+y; 73.40.Kp; 73.20.Hb

Discipline

• 73.20.Hb: Impurity and defect levels; energy states of adsorbed species
• 73.30.+y: Surface double layers, Schottky barriers, and work functions(see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics)
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 741-744

Dates

published

1993-10

Contributors

author

L. Dobaczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Langer

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Missous

• University of Manchester, Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, The United Kingdom

Identifiers

DOI

10.12693/APhysPolA.84.741