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1993 | 84 | 4 | 741-744
Article title

Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions

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EN
Abstracts
EN
The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al on AlGaAs metal-semiconductor junctions is reported. The pressure change of the Schottky barrier on n-type AlGaAs is the same as that of the energy gap (for both direct and indirect-gap AlGaAs compositions), while for p-type AlGaAs it is negligible. This result is in direct conflict with a class of models of the Schottky barrier formation based on a concept of a semiconductor neutrality level alignment with the metal Fermi level.
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EN
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • University of Manchester, Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, The United Kingdom
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z432kz
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