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1993 | 84 | 4 | 737-740
Article title

Magnetoresistance of n-CdTe in the "Persistent" State

Content
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Languages of publication
EN
Abstracts
EN
In this paper we present results of measurements done on photoexcited carriers in high purity n-CdTe at liquid helium temperature. The photocurrent under near band gap illumination was measured, as well as the long term (≈ 15 hours) photoconductive decay after switching off the light. The transverse magnetoresistance was measured in high magnetic fields in two cases: 1) under external illumination, 2) in the "persistent" state after ≈ 15 h of photocurrent decay. It was shown that in high magnetic fields this magnetoresistance exhibits a quadratic dependence on magnetic field (Δρ/ρ ≈ B^{2}) in both cases.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
737-740
Physical description
Dates
published
1993-10
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z431kz
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