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1993 | 84 | 4 | 713-716
Article title

Photoluminescence Properties of Porous Silicon Prepared by Electrochemical Etching of Si Epitaxial Layer

Content
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Languages of publication
EN
Abstracts
EN
The photoluminescence properties of porous layers prepared by anodization of p/p^{+} silicon epitaxial wafers are presented. The shift of the photoluminescence spectrum towards shorter wavelength due to the porosity increase and the experimental dependence of the photoluminescence maximum position on HF concentration during anodization are shown. Degradation of the photoluminescence intensity dependence on the storage time is described.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
713-716
Physical description
Dates
published
1993-10
Contributors
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z425kz
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