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1993 | 84 | 4 | 701-704
Article title

Electric Field Stimulated Emission of Electrons from Deep Traps in SiO_{2}

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Abstracts
EN
An electric field induced electron tunneling emission from deep traps and an energy distribution of trap levels in VLSI grade SiO_{2} layers have been studied using a new isochronal - EFSE - technique. A broad spectrum with a density of trap states peak at about 1.9 eV was observed for the first time. The experiment proved the importance of an electron trap-to-band tunneling emission in SiO_{2}.
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Contributors
  • Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
author
  • Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
author
  • Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
  • Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
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bwmeta1.element.bwnjournal-article-appv84z422kz
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