EN
An electric field induced electron tunneling emission from deep traps and an energy distribution of trap levels in VLSI grade SiO_{2} layers have been studied using a new isochronal - EFSE - technique. A broad spectrum with a density of trap states peak at about 1.9 eV was observed for the first time. The experiment proved the importance of an electron trap-to-band tunneling emission in SiO_{2}.