Electric Field Stimulated Emission of Electrons from Deep Traps in SiO_{2}

• Authors: I. Strzałkowski , M. Marczewski , M. Kowalski , C. Jastrzębski
• Languages of publication: EN

Abstracts

EN

An electric field induced electron tunneling emission from deep traps and an energy distribution of trap levels in VLSI grade SiO_{2} layers have been studied using a new isochronal - EFSE - technique. A broad spectrum with a density of trap states peak at about 1.9 eV was observed for the first time. The experiment proved the importance of an electron trap-to-band tunneling emission in SiO_{2}.

Keywords

EN

72.20.Jv; 73.40.Qv; 73.60.Hy

Discipline

• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 701-704

Dates

published

1993-10

Contributors

author

I. Strzałkowski

• Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

M. Marczewski

• Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

M. Kowalski

• Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

C. Jastrzębski

• Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.701