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1993 | 84 | 4 | 689-692
Article title

Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering

Content
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Languages of publication
EN
Abstracts
EN
In this paper we present the Raman scattering measurements of the ZnSe epilayers grown on (001) GaAs substrate by molecular beam epitaxy method. We have studied dependence of the frequency shift of LO(ZnSe) mode in the Raman spectra vs. thickness of the ZnSe layer. The intensity of LO(ZnSe)/LO(GaAs) ratio vs. orientation angle α of the E vector of the exciting light on the ZnSe/GaAs interface relatively to the sample orientation is presented too.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
689-692
Physical description
Dates
published
1993-10
Contributors
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland
author
  • Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland
author
  • Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z419kz
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