Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering

• Authors: W. Bała , M. Drozdowski , M. Kozielski
• Languages of publication: EN

Abstracts

EN

In this paper we present the Raman scattering measurements of the ZnSe epilayers grown on (001) GaAs substrate by molecular beam epitaxy method. We have studied dependence of the frequency shift of LO(ZnSe) mode in the Raman spectra vs. thickness of the ZnSe layer. The intensity of LO(ZnSe)/LO(GaAs) ratio vs. orientation angle α of the E vector of the exciting light on the ZnSe/GaAs interface relatively to the sample orientation is presented too.

Keywords

EN

78.30.Hv

Discipline

• 78.30.Hv: Other nonmetallic inorganics

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 689-692

Dates

published

1993-10

Contributors

author

W. Bała

• Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

author

M. Drozdowski

• Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland

author

M. Kozielski

• Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland

Identifiers

DOI

10.12693/APhysPolA.84.689