Light Induced Ordering of the EL2 Defects in the Metastable State

• Authors: P. Trautman , J. Baranowski
• Languages of publication: EN

Abstracts

EN

We tried to detect a strain in the crystal induced by the ordering of the EL2 defects in the metastable state by measuring linear dichroism and birefringence. We found that this strain is below the detection limit of our experiments and lower than that induced by 1 MPa of external stress. The observed dependence of orientation of the EL2 defects in the metastable state on the polarization of light used to transform EL2 to the metastable state is consistent with the attribution of the metastability of EL2 to the transformation of the isolated As_{Ga} to the V_{Ga}A_{Si} defect and is in conflict with the As_{Ga}-A_{Si} defect pair model of EL2.

Keywords

EN

71.55.Eq; 78.50.Ge; 78.20.Hp

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 677-680

Dates

published

1993-10

Contributors

author

P. Trautman

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Baranowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.677