Deep Level Transient Spectroscopy Measurements of an Acceptor-like State of Metastable EL2 in GaAs and GaAsP

• Authors: A. Babiński , A. Wysmołek , T. Słupiński
• Languages of publication: EN

Abstracts

EN

The results of deep level transient spectroscopy measurements of an acceptor-like state of metastable EL2 in GaAs and GaAs_{0.97}P_{0.03} are presented. The uniaxial stress in GaAs was applied in order to find the deep leve1 transient spectroscopy signal. It was found that the deep level transient spectroscopy signal depended on the stress direction. In GaAs_{0.97}P_{0.03} the deep level transient spectroscopy peak related to an acceptor-like state of metastable EL2 was observed without external stress.

Keywords

EN

71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors

• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 673-676

Dates

published

1993-10

Contributors

author

A. Babiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

A. Wysmołek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

T. Słupiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.673