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1993 | 84 | 4 | 673-676
Article title

Deep Level Transient Spectroscopy Measurements of an Acceptor-like State of Metastable EL2 in GaAs and GaAsP

Content
Title variants
Languages of publication
EN
Abstracts
EN
The results of deep level transient spectroscopy measurements of an acceptor-like state of metastable EL2 in GaAs and GaAs_{0.97}P_{0.03} are presented. The uniaxial stress in GaAs was applied in order to find the deep leve1 transient spectroscopy signal. It was found that the deep level transient spectroscopy signal depended on the stress direction. In GaAs_{0.97}P_{0.03} the deep level transient spectroscopy peak related to an acceptor-like state of metastable EL2 was observed without external stress.
Keywords
EN
Year
Volume
84
Issue
4
Pages
673-676
Physical description
Dates
published
1993-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z415kz
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