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1993 | 84 | 4 | 669-672
Article title

Highly Compensated GaAs Crystal Obtained by Molecular CO Doping

Content
Title variants
Languages of publication
EN
Abstracts
EN
GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p_{CO}/p_{tot} = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10^{7} Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
Keywords
EN
Year
Volume
84
Issue
4
Pages
669-672
Physical description
Dates
published
1993-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z414kz
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